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1

Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions

M. Idrissi-Benzohra, M. Abdelaoui, M. Benzohra

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 531 KB

english, 2006

2

Electrical characterizations of preamorphized junctions under LF magnetic field

M. Abdelaoui, M. Idrissi-Benzohra, H. Mehor, M. Benzohra, F. Olivié

Journal:

Microelectronics Journal

Year:

2003

Language:

english

File:

PDF, 881 KB

english, 2003

3

Thermal behaviour of 6H–SiC bipolar transistors: spice simulation and applications

D. Chalabi, M. Idrissi-Benzohra, A. Saidane, M. Benzohra, M. Ketata

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 433 KB

english, 2004

4

Thermal behavior Spice study of 6H-SiC NMOS transistors

D. Chalabi, A. Saidane, M. Idrissi-Benzohra, M. Benzohra

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 518 KB

english, 2009

5

Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctions

M. Abdelaoui, M. Idrissi-Benzohra, M. Lamine, M. Benzohra

Journal:

Microelectronics Journal

Year:

2003

Language:

english

File:

PDF, 178 KB

english, 2003

6

Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

Mohamed Benzohra, François Olivie, Malika Idrissi-Benzohra, Kaouther Ketata, Mohamed Ketata

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2002

Language:

english

File:

PDF, 169 KB

english, 2002

7

Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects

M. Ihaddadene, J. Marcon, M. Idrissi-Benzohra, K. Ketata, S. Demichel, J. Flicstein, J.L. Pelouard, M. Ketata

Journal:

Computational Materials Science

Year:

2002

Language:

english

File:

PDF, 211 KB

english, 2002

8

Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised

M. Abdelaoui, M. Idrissi-Benzohra, E. Joubert, M. Benzohra, F. Olivié, M. Ketata

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 313 KB

english, 2003

9

[IEEE International Conference on Microelectronics - Beirut,Lebanon (11-13 Dec. 2002)] The 14th International Conference on Microelectronics, - Response of electrically active defects in P/sup +/N junctions when applying a magnetic field

Abdelaoui, M., Lamine, M., Idrissi-Benzohra, M., Benzohra, M., Ketata, M., Olivie, F.

Year:

2002

Language:

english

File:

PDF, 318 KB

english, 2002

10

Influence of processing parameters on electrical properties of polysilicon/ monosilicon junctions

IDRISSI-BENZOHRA, MALIKA

Journal:

International Journal of Electronics

Year:

1996

Language:

english

File:

PDF, 272 KB

english, 1996

11

Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon

H. Benchenane-mehor, M. Idrissi-benzohra, M. Benzohra, F. Olivie

Year:

2004

Language:

english

File:

PDF, 108 KB

english, 2004

12

Simplex Algorithm for Deep-Level Transient Spectroscopy: Simplex-DLTS

Benchenane-Mehor, Halima, Benzohra, Mohamed, Idrissi-Benzohra, Malika, Olivie, François, Saïdane, Abdelkader

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 126 KB

english, 2004

13

[IEEE Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. - Tunis, Tunisia (2004.12.6-2004.12.8)] Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. - Magnetic susceptibility of P/sup +/N preamorphized junctions under a dc magnetic field

Abdelaoui, M., Idrissi-Benzohra, M., Benzhora, M., Olivie, F.

Year:

2004

Language:

english

File:

PDF, 455 KB

english, 2004